gan wideband 15 w pulsed transistor in plastic package dc - 3.5 ghz rev. v3 magx - 000035 - 01500p 1 1 1 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport features ? gan on sic d - mode transistor technology ? unmatched, ideal for pulsed applications ? 50 v typical bias, class ab ? common - source configuration ? thermally - enhanced 3 x 6 mm 14 - lead dfn ? mttf = 600 years (t j < 200c) ? halogen - free green mold compound ? rohs* compliant and 260c reflow compatible ? msl - 1 description the magx - 000035 - 01500p is a gan on sic unmatched power device offering the widest rf frequency capability, most reliable high voltage operation, lowest overall power transistor size, cost and weight in a true smt plastic - packaging technology. use of an internal stress buffer technology allows reliable operation at junction temperatures up to 200c. the small package size and excellent rf performance make it an ideal replacement for costly flanged or metal - backed module components. pin no. function pin no. function 1 no connection 8 no connection 2 no connection 9 no connection 3 v gg /rf in 10 no connection 4 v gg /rf in 11 v dd /rf out 5 v gg /rf in 12 no connection 6 no connection 13 no connection 7 no connection 14 no connection 15 paddle 4 part number package magx - 000035 - 01500p bulk packaging magx - 000035 - 0150tp 250 piece reel magx - 000035 - pb1ppr sample board * restrictions on hazardous substances, european union directive 2002/95/ec. pin configuration 3 functional schematic ordering information 1,2 1. reference application note m513 for reel size information. 2. when ordering sample evaluation boards, choose a standard frequency range indicated on page 4 or specify a desired custom range. custom requests may increase lead times. 3. macom recommends connecting unused package pins to ground. 4. the exposed pad centered on the package bottom must be connected to rf and dc ground. nc 1 2 3 4 5 6 7 14 13 12 11 10 9 8 15 g g g d nc nc nc nc nc nc nc nc nc
gan wideband 15 w pulsed transistor in plastic package dc - 3.5 ghz rev. v3 magx - 000035 - 01500p 2 2 2 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport parameter test conditions symbol min. typ. max. units dc characteristics drain - source leakage current v gs = - 8 v, v ds = 175 v i ds - - 1.0 ma gate threshold voltage v ds = 5 v, i d = 2 ma v gs (th) - 5 - 3 - 2 v forward transconductance v ds = 5 v, i d = 500 ma g m 0.35 - - s dynamic characteristics input capacitance v ds = 0 v, v gs = - 8 v, f = 1 mhz c iss - 4.2 - pf output capacitance v ds = 50 v, v gs = - 8 v, f = 1 mhz c oss - 1.8 - pf reverse transfer capacitance v ds = 50 v, v gs = - 8 v, f = 1 mhz c rss - 0.2 - pf electrical characteristics: t a = 25c electrical specifications: freq. = 1.6 ghz, t a = 25c, v dd = +50 v, z 0 = 50 parameter test conditions symbol min. typ. max. units rf functional tests cw output power (p2.5 db) v dd = 36 v, i dq = 35 ma p out - 7 - w pulsed output power (p2.5 db) 1 ms and 10% duty cycle v dd = 50 v, i dq = 35 ma p out 12.5 17 - w pulsed power gain (p2.5 db) v dd = 50 v, i dq = 35 ma g p 17 19.5 - db pulsed drain efficiency (p2.5 db) v dd = 50 v, i dq = 35 ma d 55 65 - % load mismatch stability (p2.5 db) v dd = 50 v, i dq = 35 ma vswr - s - 5:1 - - load mismatch tolerance (p2.5 db) v dd = 50 v, i dq = 35 ma vswr - t - 10:1 - - typical performance 5 : v dd = 50 v, i dq = 35 ma, t a = 25c parameter 30 mhz 1 ghz 2.5 ghz 3.5 ghz units gain 25 23 17 14 db saturated power (p sat ) 18 16.5 15 14 w power gain at p sat 22 18 14 11 db pae @ p sat 75 68 60 55 % 5. typical rf performance measured in m/a - com technology solutions rf evaluation boards. see recommended tuning solutions on page 4.
gan wideband 15 w pulsed transistor in plastic package dc - 3.5 ghz rev. v3 magx - 000035 - 01500p 3 3 3 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport parameter absolute max. input power p out - g p + 2.5 dbm drain supply voltage, v dd +65 v gate supply voltage, v gg - 8 v to 0 v supply current, i dd 800 ma power dissipation, cw @ 85oc 13 w power dissipation (p avg ), pulsed @ 85 c 17 w junction temperature 11 200c operating temperature - 40c to +95c storage temperature - 65c to +150c absolute maximum ratings 6,7,8,9,10 6. exceeding any one or combination of these limits may cause permanent damage to this device. 7. m/a - com technology solutions does not recommend sustained operation near these survivability limits. 8. for saturated performance it is recommended that the sum of (3 * v dd + abs (v gg )) < 175 v. 9. cw operation at v dd voltages above 36 v is not recommended. 10. operating at nominal conditions with t j 200c will ensure mttf > 1 x 10 6 hours. junction temperature directly affects device mttf and should be kept as low as possible to maximize lifetime. 11. junction temperature (t j ) = t c + ? jc * ((v * i) - (p out - p in )) typical cw thermal resistance ( ? jc ) = 15.7c/w a) for t c = 83c, t j = 200c @ 36 v, 398 ma, p out = 7.2 w, p in = 0.22 w typical transient thermal resistances: b) 300 s pulse, 10% duty cycle, ? jc = 5.33c/w for t c = 83c, t j = 170c @ 50 v, 603 ma, p out = 14.3 w, p in = 0.41 w c) 1 ms pulse, 10% duty cycle, ? jc = 5.85c/w for t c = 83c, t j = 172c @ 50 v, 576 ma, p out = 14.0 w, p in = 0.41 w d) 1 ms pulse, 20% duty cycle, ? jc = 6.81c/w for t c = 83c, t j = 186c @ 50 v, 570 ma, p out = 13.8 w, p in = 0.41 w
gan wideband 15 w pulsed transistor in plastic package dc - 3.5 ghz rev. v3 magx - 000035 - 01500p 4 4 4 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport part frequency = 1.6 ghz frequency = 2.2 - 2.5 ghz frequency = 2.6 - 3.6 ghz c1 0402 27 pf, 5%, 200 v, atc 0402 18 pf, 5%, 200 v, atc 0402 18 pf, 5%, 200 v, atc c2 0603, 5.6 pf, 0.1 pf, 250 v, atc 0402, 2.2 pf, 0.1pf, 200 v, atc 0402, 1.2 pf, 0.1 pf, 200 v, atc c3 0603, 18 pf, 10%, 250 v, atc n/a n/a c4 0805, 1000 pf, 100 v, 5%, avx 0805, 1000 pf, 100 v, 5%, avx 0805, 1000 pf, 100 v, 5%, avx c5 0505, 2.2 pf, 5%, 250 v, atc (vertical) 0603, 0.8 pf, 0.1 pf, 250 v, atc n/a c6 n/a 0603, 1.5 pf, 0.1 pf, 250 v, atc 0402, 1.0 pf, 0.1 pf, 200 v, atc c7 0505, 36 pf, 5%, 250 v, atc (vertical) 0402 18 pf, 5%, 200 v, atc 0402 18 pf, 5%, 200 v, atc c8 0505, 18 pf, 5%, 250 v, atc 0402 10 pf, 5%, 200 v, atc n/a c9 0805, 1000 pf, 100 v, 5%, avx 0805, 1000 pf, 100 v, 5%, avx 0805, 1000pf, 100v, 5%, avx c10 1210, 1 f, 100 v, 20%, atc 1210, 1 f, 100 v, 20%, atc 1210, 1 f, 100 v, 20%, atc c11 n/a 0402, 3.9 pf, 0.1 pf, 200 v, atc 0402, 2.0 pf, 0.1 pf, 200 v, atc c12 n/a 0402, 3.9 pf, 0.1 pf, 200 v, atc 0402, 2.0 pf, 0.1 pf, 200 v, atc c13 n/a n/a 0402 10 pf, 5%, 200 v, atc r1 12 , 0603, 5% 200 , 0603, 5% 100 , 0603, 5% r2 1.2 , 0603, 5% 1.0 , 0603, 5% 1.0 , 0603, 5% r3 1.2 , 0603, 5% 9.1 , 0603, 5% 9.1 , 0603, 5% l1 0603 hp, 5.1 nh, 5% 0402, 0.8 nh,10% shorting tab l2 0603 hp, 24 nh, 5% 0603, 1.8 nh, 10% shorting tab l3 n/a n/a 0603, 10nh, 10% parts list (n/a = not applicable for this tuning solution) parts measured on evaluation board (8 - mils thick ro4003c). electrical and thermal ground is provided using copper - filled via hole array (not pictured), and evaluation board is mounted to a metal plate. matching is provided using lumped elements as shown at left. recommended tuning solutions for 3 frequency ranges are detailed in the parts list below. evaluation board details and recommended tuning solutions turning the device on 1. set v g to the pinch - off (v p ), typically - 5 v. 2. turn on v d to nominal voltage (50 v). 3. increase v gs until the i ds current is reached. 4. apply rf power to desired level. turning the device off 1. turn the rf power off. 2. decrease v g down to v p. 3. decrease v d down to 0 v. 4. turn off v g . bias sequencing g n d g n d g n d g n d g n d g n d
gan wideband 15 w pulsed transistor in plastic package dc - 3.5 ghz rev. v3 magx - 000035 - 01500p 5 5 5 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport handling procedures please observe the following precautions to avoid damage: static sensitivity gallium nitride devices and circuits are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these class 1b devices. lead - free 3x6 mm 14 - lead dfn ? ? reference application note s2083 for lead - free solder reflow recommendations. meets jedec moisture sensitivity level 1 requirements. plating is ni/pd/au.
gan wideband 15 w pulsed transistor in plastic package dc - 3.5 ghz rev. v3 magx - 000035 - 01500p 6 6 6 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport applications section s - parameter data: t a = 25c, v dd = +50 v, i dq = 35 ma 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 magx00035_01500p_50 swp max 6ghz swp min 0.03ghz 3.698 ghz r 0.0486879 x 0.177179 2.699 ghz r 0.0493891 x 0.031524 1.296 ghz r 0.0528072 x -0.265641 3.703 ghz r 0.105546 x -0.304886 2.699 ghz r 0.156665 x -0.525263 1.304 ghz r 0.421823 x -1.10236 s(1,1) magx00035_015000p_50 s(2,2) magx00035_015000p_50 0.03 2.03 4.03 6 frequency (ghz) spar graph 2 -10 0 10 20 30 40 db(|s(2,1)|) magx00035_015000p_50 db(gmax()) magx00035_015000p_50 db(msg()) magx00035_015000p_50
gan wideband 15 w pulsed transistor in plastic package dc - 3.5 ghz rev. v3 magx - 000035 - 01500p 7 7 7 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport thermal performance: freq. = 1.6 ghz, t c = 85c, v dd = +50 v, i dq = 25 ma, z 0 = 50 junction temperature measured using high - speed transient (hst) temperature detection microscopy. applications section power (output & dissipated) vs. transient junction temperature, pulse duration and duty cycle 100 s, 10% 100 s, 20% 300 s, 10% 300 s, 20% 500 s, 10% 500 s, 20% 1000 s, 10% 1000 s, 20% 8000 s, 9.2% pulse width, duty cycle 15.6 15.1 16.3 15.9 15.2 15.1 15.2 15.1 16.5 power dissipation (w) 14.5 14.4 14.3 14 14.4 13.9 14 13.8 13.3 1.6 ghz p out (w) 131.9 148.3 169.6 185.9 165.1 180.2 172 185.9 182 max. transient junction temp. (c) 12 13 14 15 16 17 18 100 120 140 160 180 200 220 power dissipation 1.6 ghz power output max. transient junction temp. pulse width (s), duty cycle (%)
gan wideband 15 w pulsed transistor in plastic package dc - 3.5 ghz rev. v3 magx - 000035 - 01500p 8 8 8 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport applications section 1.6 ghz, 1 ms pulse, 10% duty cycle, v dd = +50 v, t a = 25c, z 0 = 50 pae vs. input power gain vs. input power output power vs. input power typical performance curves ( reference 1.6 ghz parts list ): 16 18 20 22 24 26 10 15 20 25 idq = 80 ma idq = 35 ma input power (dbm) 0 4 8 12 16 20 10 15 20 25 idq = 80 ma idq = 35 ma input power (dbm) 20 30 40 50 60 70 10 15 20 25 idq = 80 ma idq = 35 ma input power (dbm)
gan wideband 15 w pulsed transistor in plastic package dc - 3.5 ghz rev. v3 magx - 000035 - 01500p 9 9 9 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport 2.2 - 2.5 ghz, cw, v dd = 28 v, i dq = 35 ma, t a = 25c, z 0 = 50 gain vs. input power output power vs. input power typical performance curves ( reference 2.2 - 2.5 ghz parts list ): applications section pulsed oip3 data pulse width 8.28 ms, duty cycle 9% v dd = 50 v, i dq = 70 ma, freq = 1.62 ghz, 1 mhz spacing on tones p in (dbm) p out per tone (dbm) oip3 (dbm) 8 31.1 46 9 32.0 47 10 32.9 50 11 33.7 50 12 34.5 47 8 10 12 14 16 15 16 17 18 19 20 21 22 23 24 25 26 27 28 2.2 ghz 2.3 ghz 2.4 ghz 2.5 ghz input power (dbm) 28 30 32 34 36 38 40 15 16 17 18 19 20 21 22 23 24 25 26 27 28 2.2 ghz 2.3 ghz 2.4 ghz 2.5 ghz input power (dbm)
gan wideband 15 w pulsed transistor in plastic package dc - 3.5 ghz rev. v3 magx - 000035 - 01500p 10 10 10 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport 2.6 - 3.6 ghz, 3 ms pulse, 10% duty cycle, v dd = 50 v, i dq = 35 ma, t a = 25c, z 0 = 50 p sat vs. frequency typical performance curves ( reference 2.6 - 3.6 ghz parts list ): applications section small signal gain vs. frequency pae vs. frequency gain vs. frequency 14 16 18 20 22 24 2.6 2.8 3.0 3.2 3.4 3.6 frequency (ghz) 8 10 12 14 16 18 2.6 2.8 3.0 3.2 3.4 3.6 frequency (ghz) 45 50 55 60 65 70 2.6 2.8 3.0 3.2 3.4 3.6 frequency (ghz) 8 10 12 14 16 18 2.6 2.8 3.0 3.2 3.4 3.6 frequency (ghz)
|
